1.0 A, 40 V, Schottky Power Rectifier, Surface Mount

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bend Leads\n• Rectangular Package for Automated Handling\n• Very Low Forward Voltage Drop5 Volts Max @ 1.0 A, TJ5°C)\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Weight: 95 mg (approximately)\n• Lead and Mounting Surface Tempe;

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SBRS5641NT3G

ONSEMI

安森美半导体

Transient Voltage Suppressors

文件：426.36 Kbytes 页数：3 Pages

Microsemi

美高森美

Transient Voltage Suppressors

文件：426.36 Kbytes 页数：3 Pages

Microsemi

美高森美

Transient Voltage Suppressors

文件：426.36 Kbytes 页数：3 Pages

Microsemi

美高森美