The MBRD1035CTL employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State of the art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

switching power supplies, free wheeling diode and polarity protection diodes.

Features

• Highly Stable Oxide Passivated Junction

• Guardring for Stress Protection

• Matched Dual Die Construction −

May be Paralleled for High Current Output

• High dv/dt Capability

• Short Heat Sink Tap Manufactured − Not Sheared

• Very Low Forward Voltage Drop

• Epoxy Meets UL 94 V−0 @ 0.125 in

• SBRD8 and NRVBD Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• ESD Rating:

♦ Human Body Model = 3B (> 8 kV)

♦ Machine Model = C (> 400 V)

SBRD81035CTLG-VF01属于分立半导体产品 > 二极管 - 整流器 - 阵列。安森美半导体公司制造生产的SBRD81035CTLG-VF01二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。