SCHOTTKY BARRIER DIODE

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JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

SCHOTTKY BARRIER DIODE

JSMC

华微电子

SCHOTTKY RECTIFIER

Reverse Voltage - 30 and 40 Volts Forward Current - 20.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward

文件：85.39 Kbytes 页数：2 Pages

GE

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte

文件：2.66323 Mbytes 页数：4 Pages

JIANGSU

长电科技

Low VF Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec

文件：103.54 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap

文件：185.43 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

文件：156.93 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO

文件：149.13 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

20A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

文件：66.54 Kbytes 页数：2 Pages

DIODES

美台半导体

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

文件：156.93 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技