Schottky Barrier Rectifier

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VishayVishay Siliconix

威世科技

Schottky Barrier Rectifier

Vishay

威世科技

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro

文件：177.19 Kbytes 页数：2 Pages

BILIN

银河微电

SCHOTTKY RECTIFIER

Reverse Voltage - 30 and 40 Volts Forward Current - 10.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low f

文件：74.85 Kbytes 页数：2 Pages

GE

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte

文件：280.08 Kbytes 页数：3 Pages

JIANGSU

长电科技

Low VF Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec

文件：82.54 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

Schottky Barrier Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur

文件：142.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO

文件：134.86 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

10A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

文件：65.89 Kbytes 页数：2 Pages

DIODES

美台半导体

Schottky Barrier Rectifiers

Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

文件：236.97 Kbytes 页数：3 Pages

Good-Ark

固锝电子