达林顿阵列功率驱动集成电路

SAP2003是高耐压、大电流达林顿阵列，由七个NPN 达林顿管组成，所有单元共用发射极。每一对达林顿都串联一个2.7K 的基极电阻，直接兼容TTL 和5V CMOS 电路。\n\n SAP2003单通道灌电流可达500mA，且最高工作电压可达50V。高负载电流状态下，输出可以并行运行。\n\n • 工作电压范围宽\n• 七路高增益达林顿阵列\n• 输出电压高（可达50V）\n• 输出电流大（单通道可达500mA）\n• 可与TTL、CMOS直接兼容\n• 内置钳位二极管兼容感性负载;

Silan

士兰微

30V, 2.0A Rectifier

文件：147.67 Kbytes 页数：3 Pages

SANYO

三洋

Schottky Barrier Diode 30V, 2.0A Rectifier

30V, 2.0A Rectifier Features • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Applications • High frequency rectification (switching regulator

文件：32.52 Kbytes 页数：3 Pages

SANYO

三洋

Schottky Barrier Diode

Features • Low switching noise • Halogen free compliance • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm) Applications • High frequency rectification (switching regula

文件：766.39 Kbytes 页数：4 Pages

ONSEMI

安森美半导体