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SAFEB836MAL0F00	文件：485.53 Kbytes Page：17 Pages	Filters for Communication Equipment ChipMultilayerLCFilters(BPF)	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所	MURATA1
SAFEB836MAL0F00	文件：474.4 Kbytes Page：17 Pages	Filters for Communication Equipment ChipMultilayerLCFilters(BPF)	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所	MURATA1
836A	文件：97.67 Kbytes Page：6 Pages	SILICON28VHYPERABRUPTVARACTORDIODES Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur	ZetexZetex Semiconductors 捷特科半导体	Zetex
836A	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	ZetexZetex Semiconductors 捷特科半导体	Zetex
836B	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	ZetexZetex Semiconductors 捷特科半导体	Zetex
836B	文件：66.99 Kbytes Page：2 Pages	SurfaceMountZenerDiodes Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
836C-X	文件：78.79 Kbytes Page：2 Pages	83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS [GORDOS] REEDRELAYS 83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
A836ERW	文件：196 Kbytes Page：2 Pages	LowCost,8WDIPWideInputRangeDC/DCConverters	MPD MPD (Memory Protection Devices)	MPD
ADG836	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836L	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM-REEL	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRMZ	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD

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详细参数

型号：
SAFEB836MAL
功能描述：
信号调节 836MHZ
RoHS：
否
制造商：
EPCOS
产品：
Duplexers
频率：
782 MHz, 751 MHz
阻抗：
50 Ohms
端接类型：
SMD/SMT
封装/箱体：
2.5 mm x 2 mm
工作温度范围：
- 30 C to + 85 C
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宝隆宏业科技有限公司	SAFEB836MAL0F00	MURATA/村田	2122+	SMD	9880	只做原装优势渠道可开增值税票	询价
深圳市博浩通科技有限公司	SAFEB836MAL0F00	MURATA	23+	SMD	8820	全新原装优势	询价
深圳市益百分电子有限公司	SAFEB836MAL0F00	muRata	17+	SMD	100000	原装正品现货	询价
深圳市鹏和科技有限公司	SAFEB836MAL0F00	原装	24+		5000	只做原装公司现货	询价
深圳市卓越微芯电子有限公司	SAFEB836MAL0F00	??	2020+		5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
千层芯半导体(深圳)有限公司	SAFEB836MAL0F00		2018+	SMD	5500	一级代理原装现货假一罚十	询价
深圳市振宏微科技有限公司	SAFEB836MAL0F00	SOD-323	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳兆威电子有限公司	SAFEB836MAL0F00	MURATA/村田	22+		80000	原装正品现货	询价
上海市鑫鸿达电子	SAFEB836MAL0F00	MURATA/村田	2022+		187	全新原装货期两周	询价
深圳市维尔达电子有限公司	SAFEB836MAL0F00	原装MURATA	2023+	SOD-323	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价

更多SAFEB836MAL供应商更新时间2024-6-20 14:00:00

详细参数

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