S9014-D

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.4Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Marking:S9014 •LeadFreeFinish/RoHSCompliant(PSuffixdes

S9014-D

NPNSiliconTransistors

S9014-H

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.1A

S9014-L

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.1A

S9014M

TRANSISTOR

DESCRIPTION NPNEpitaxialSiliconTransistor FEATURES HighhFEandgoodlinearity ComplementarytoS9015M APPLICATION Pre-Amplifier,LowLevel&LowNoise Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM, DVD-ROM,NotebookPC,etc.)

S9014R

Plastic-EncapsulateTransistors

S9014T

Pre-Amplifier,LowLevel&LowNoise

FEATURES Powerdissipation CM:0.4W Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C

S9014T

SOT-523Plastic-EncapsulateTransistors

S9014-TA

TO-92Plastic-EncapsulateTransistors

S9014W

PlasticEncapsulatedTransistor