S8201

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re

S8201

9 watt; Mini Spiral Compact Fluorescent; 2700K; 82 CRI; GU24 base; 120 volts

S8201-46R

COIN CELL RETAINER (12mm) (TAPE REELED)

COINCELLRETAINER(12mm)(TAPE&REELED)

S8201_14

RF POWER VDMOS TRANSISTOR

S8201-46R

包装：散装 类别：电池产品 电池座，电池夹，电池触头 描述：BATT RETAIN COIN 12.5MM 1CEL SMD

Harwin Inc.

SAI8201

AcompletetrainingsysteminthefieldofIndustrialProcessControl

SC8201

ONE-CELLLIBATTERYPROTECTIONCIRCUIT

DESCRIPTION SC8201isaLiFePO4batteryprotectioncircuit.ItissuitableforprotectingLI+batteryagainstdamagefromovercharge,overdischarge,andovercurrent.ItcontainshighaccuratevoltageDetectionanddelaycircuits. FEATURES *Lowconsumptioncurrent VDD=3.4V,IDD=(Typ.3μ

SI-8201L

SelfOscillatingSwitchingTypewithCoil

Features ●IntegratedswitchingICandcoilconstruction ●Requires2externalcomponentsonly ●Lowswitchingnoise ●Heatsinknotrequired Applications ●Forpowersuppliesintelephonesets ●Forpowersuppliesinofficeequipment

SI-8201L

SwitchingType(SelfOscillationTypewithCoil)

SKY-8201

Compact2UCarrierGrade,HighPerformanceServerbasedonIntel®Xeon®ProcessorScalableFamily

Features ƒ2U20deeprackmountserver ƒDualIntel®Xeon®Platinum,Gold,SilverorBronzeProcessor(Upto165W TDP) ƒ16xDIMMsocketssupportupto1024GBDDR42666/2933MHzDDR4 (ECC/RDIMM/LRDIMM) ƒRichAdd-InCardSupport:UptofourFH/FLPCIex8Gen3slots,twoFH/HL PCIex8Gen3