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S8201

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re

Polyfet

POLYFET

S8201-46R

COIN CELL RETAINER (12mm) (TAPE REELED)

COINCELLRETAINER(12mm)(TAPE&REELED)

HARWIN

Harwin Plc

S8202

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re

Polyfet

POLYFET

S8205A

Dual N-Channel MOSFET

FEATURE zTrenchFETPowerMOSFET zExcellentRDS(on) zLowGateCharge zHighPowerandCurrentHandingCapability zSurfaceMountPackage APPLICATION zBatteryProtection zLoadSwitch zPowerManagement

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

S8205A

Dual N-Channel MOSFET

FEATURES •Halogen-freeOptionAvailable •TrenchFET®PowerMOSFETs •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

S8205B

Dual N-Channel MOSFET

EATURE zTrenchFETPowerMOSFET zExcellentRDS(on) zLowGateCharge zHighPowerandCurrentHandingCapability zSurfaceMountPackage APPLICATION zBatteryProtection zLoadSwitch zPowerManagement

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

S82078

82078 CHMOS SINGLE-CHIP FLOPPY DISK CONTROLLER

The82078ProductFamilybringsasetofenhancedfloppydiskcontrollers.Theseincludeseveralfeaturesthatallowforeasyimplementationinboththeportableanddesktopmarket.Thecurrentfamilyincludesa64pinanda44pinpartinthesmallerformfactorQFPpackage.The3.3Vversionoft

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

S82091A

ADVANCED INTEGRATED PERIPHERAL (AIP)

The82091AAAdvancedIntegratedPeripheral(AIP)isanintegratedI/Osolutioncontainingafloppydiskcontroller,2serialports,amulti-functionparallelport,anIDEinterface,andagameportonasinglechip.TheintegrationoftheseI/Odevicesresultsinaminimizationofformfactor,cos

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

S820J33SL0P6.

Ceramic Disc Capacitors Class 1 and 2, 1 kVDC, 2 kVDC, 3 kVDC and 6 kVDC, General Purpose

DESIGN Thecapacitorsconsistofaceramicdiscbothsidesofwhicharesilver-plated.Connectionleadsaremadeoftinnedcopperhavingadiameterof0.6mmor0.8mmupto3kVand0.8mmfor6kV. Thecapacitorsmaybesuppliedwithkinkedorstraightleadswithaleadspacingof5mm(0.20),

VishayVishay Siliconix

威世科技

S820K33SL0P6.

Ceramic Disc Capacitors Class 1 and 2, 1 kVDC, 2 kVDC, 3 kVDC and 6 kVDC, General Purpose

DESIGN Thecapacitorsconsistofaceramicdiscbothsidesofwhicharesilver-plated.Connectionleadsaremadeoftinnedcopperhavingadiameterof0.6mmor0.8mmupto3kVand0.8mmfor6kV. Thecapacitorsmaybesuppliedwithkinkedorstraightleadswithaleadspacingof5mm(0.20),

VishayVishay Siliconix

威世科技

S822T

Silicon NPN Planar RF Transistor

Features ●Lowsupplyvoltage ●Lowcurrentconsumption ●50Ωinputimpedanceat945MHz ●Lownoisefigure ●Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.2mAto5mA.

VishayVishay Siliconix

威世科技

S822TRW

Silicon NPN Planar RF Transistor

Features ●Lowsupplyvoltage ●Lowcurrentconsumption ●50Ωinputimpedanceat945MHz ●Lownoisefigure ●Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.2mAto5mA.

VishayVishay Siliconix

威世科技

S822TW

Silicon NPN Planar RF Transistor

Features ●Lowsupplyvoltage ●Lowcurrentconsumption ●50Ωinputimpedanceat945MHz ●Lownoisefigure ●Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.2mAto5mA.

VishayVishay Siliconix

威世科技

S8233A

BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK

TheS-8233ASeriesisaseriesoflithium-ionrechargeablebatteryprotectionICsincorporatinghigh-accuracyvoltagedetectioncircuitsanddelaycircuits.Itissuitablefora3-serial-celllithium-ionbatterypack. ■Features (1)Internalhigh-accuracyvoltagedetectioncircuit

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

S8233B

BATTERY PROTECTION IC (FOR A 3-SERIAL-CELL PACK)

TheS-8233Bisaseriesoflithium-ionrechargeablebatteryprotectionICsincorporatinghigh-accuracy(±25mV)voltagedetectioncircuitsanddelaycircuits.Itissuitablefora3-serial-celllithium-ionbatterypack. ■Features (1)Internalhigh-accuracyvoltagedetectioncircuit

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

S8233C

BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK

BATTERYPROTECTIONICFOR3-SERIAL-CELLPACK TheS-8233CSeriesisaseriesoflithium-ionrechargeablebatteryprotectionICsincorporatinghigh-accuracyvoltagedetectioncircuitsanddelaycircuits. TheS-8233Cseriesincludesthefunctiontomeasurethestatusofbatterypack. Itissuitabl

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

S82343

SYSTEM CONTROLLER/DATA BUFFER

SYSTEMCONTROLLER/DATABUFFER The82343containsthesystemcontrolanddatabufferingfunctionina160-pinquadflatpack. The82343sfunctionsarehighlyprogrammableviaasetofinternalconfigurationregisters.Defaultsonresetfortheconfigurationregistersmimicthecompatibilityrequ

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

S82433LX

LOCAL BUS ACCELERATOR (LBX)

ARCHITECTURALOVERVIEW The82430PCIsetconsistsofthe82434LXPCMCand82433LXLBXcomponentspluseitheraPCI/ISAbridgeoraPCI/EISAbridge.The82430NXPCIsetconsistsofthe82434NXPCMCand82433NXLBXcomponentspluseitheraPCI/ISAbridgeoraPCI/EISAbridge.ThePCMCandLBXprovide

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

S82433NX

LOCAL BUS ACCELERATOR (LBX)

ARCHITECTURALOVERVIEW The82430PCIsetconsistsofthe82434LXPCMCand82433LXLBXcomponentspluseitheraPCI/ISAbridgeoraPCI/EISAbridge.The82430NXPCIsetconsistsofthe82434NXPCMCand82433NXLBXcomponentspluseitheraPCI/ISAbridgeoraPCI/EISAbridge.ThePCMCandLBXprovide

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

S82S09

576-BIT BIPOLAR RAM (64 X 9)

[Signetics] DESCRIPTION Theorganizationofthisdeviceallowsbytestorageofdata,includingparity.whereparityisnotmonitored,theninthbitcanbeusedasatagorstatusindicatorforeachwordstored.Idealforscratch-pad,push-downstacks,buffermemories,andotherinternalmemorya

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详细参数

  • 型号:

    S82

  • 制造商:

    POLYFET

  • 制造商全称:

    Polyfet RF Devices

  • 功能描述:

    SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

供应商型号品牌批号封装库存备注价格
POLYFET
16+
SO8
3128
只有原装!只做原装!一片起卖!
询价
SAMSUNG
02+
TSOP
10
询价
POLYFET
23+
高频管
1200
专营高频管模块,全新原装!
询价
2017+
8
48520
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
POLYFET
2021+
SO8
3600
只做原装假一罚十
询价
SEIKO
99+
TSSOP/8
764
原装现货海量库存欢迎咨询
询价
POLYFET
2018+
SMD
5500
长期供应原装现货实单可谈
询价
SEIKO
原包装
3560
原装正品!假一罚十!现货库存热卖
询价
POLYFET
18+
SO8
3128
原装进口假一罚十
询价
POLYFET
23+
190
现货供应
询价
更多S82供应商 更新时间2024-5-1 16:12:00