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S4D10120E

1200V SIC POWER SCHOTTKY RECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb−FreeDevice AllSMCp

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

S4D10120E

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY SILICON CARBIDE S

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

S4D10120ETR

1200V SIC POWER SCHOTTKY RECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb−FreeDevice AllSMCp

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

ADC4D10120A

1200-VDirectWBGDiode

KeyFeatures: •SiCperformance •Easyparalleling •Highcurrentcarryingcapability •Verylowjunctioncapacitance •HighlystableV FandQRRatelevated temperatures

AnalogPower

Analog Power

ADC4D10120D

1200-VDirectWBGDiode

KeyFeatures: •SiCperformance •Easyparalleling •Highcurrentcarryingcapability •Verylowjunctioncapacitance •HighlystableV FandQRRatelevated temperatures

AnalogPower

Analog Power

ADC4D10120E

1200-VDirectWGBDiode

KeyFeatures: •SiCperformance •Easyparalleling •Highcurrentcarryingcapability •Verylowjunctioncapacitance •HighlystableVFandQRRatelevated temperatures

AnalogPower

Analog Power

ADC4D10120H

1200-VDirectWBGDiode

KeyFeatures: •SiCperformance •Easyparalleling •Highcurrentcarryingcapability •Verylowjunctioncapacitance •HighlystableV FandQRRatelevated temperatures

AnalogPower

Analog Power

C4D10120A

SiliconCarbideSchottkyDiode

Z-REC™RECTIFIERSandZERO-RECOVERY®RECTIFIERS SILICONCARBIDEZ-FET™MOSFET

CreeCree Inc.

科锐科锐半导体制造商

C4D10120A

4thGeneration1200V,10ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D10120D

SiliconCarbideSchottkyDiodeZ-Rec®Rectifier

Features •1.2kVSchottkyRectifier •ZeroReverseRecoveryCurrent •High-FrequencyOperation •Temperature-IndependentSwitching •ExtremelyFastSwitching Benefits •ReplaceBipolarwithUnipolarRectifiers •EssentiallyNoSwitchingLosses •HigherEfficiency •ReductionofHeatSink

WOLFSPEED

WOLFSPEED, INC.

C4D10120D

SiliconCarbideSchottkyDiode1.2kVSchottkyRectifier

Z-REC™RECTIFIERSandZERO-RECOVERY®RECTIFIERS SILICONCARBIDEZ-FET™MOSFET

CreeCree Inc.

科锐科锐半导体制造商

C4D10120E

SiliconCarbideSchottkyDiodeZ-Rec®Rectifier

Features •1.2kVSchottkyRectifier •ZeroReverseRecoveryCurrent •High-FrequencyOperation •Temperature-IndependentSwitchingBehavior •ExtremelyFastSwitching •PositiveTemperatureCoefficientonVF Benefits •ReplaceBipolarwithUnipolarRectifiers •EssentiallyNoSwitchingLo

WOLFSPEED

WOLFSPEED, INC.

C4D10120E

SiliconCarbideSchottkyDiode

Z-REC™RECTIFIERSandZERO-RECOVERY®RECTIFIERS SILICONCARBIDEZ-FET™MOSFET

CreeCree Inc.

科锐科锐半导体制造商

C4D10120H

4thGeneration1200V,10ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D10120H

SiliconCarbideSchottkyDiodeZ-RecRectifier

CreeCree Inc.

科锐科锐半导体制造商

E4D10120A

SiliconCarbideSchottkyDiodeE-SeriesAutomotive

CreeCree Inc.

科锐科锐半导体制造商

E4D10120A

E-SeriesAutomotive4thGeneration1200V,10ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

S4D10120A

1200VSICPOWERSCHOTTKYRECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb−FreeDevice AllSMCp

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

S4D10120D

1200VSICPOWERSCHOTTKYRECTIFIER

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb−FreeDevice AllSMCp

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

S4D10120F

1200VSICPOWERSCHOTTKYRECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb−FreeDevice AllSMCp

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

产品属性

  • 产品编号:

    S4D10120E

  • 制造商:

    SMC Diode Solutions

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管类型:

    碳化硅肖特基

  • 电流 - 平均整流 (Io):

    10A

  • 速度:

    无恢复时间 > 500mA(Io)

  • 不同 Vr、F 时电容:

    772pF @ 0V,1MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 工作温度 - 结:

    -55°C ~ 175°C

  • 描述:

    DIODE SCHOTTKY SILICON CARBIDE S

供应商型号品牌批号封装库存备注价格
SMC Diode Solutions
24+
DPAK
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
SMC Diode Solutions
21+
8-SMD,扁平引线
8781
专业分立半导体,原装渠道正品现货
询价
23+
N/A
96000
一级代理放心采购
询价
23+
N/A
96000
一级代理放心采购
询价
MINI
2018+
SMD
3600
MINI专营品牌全新原装正品假一赔十
询价
SYNERGY
24+
SMD
3200
进口原装假一赔百
询价
SYNERGY
原厂封装
685
一级代理 原装正品假一罚十价格优势长期供货
询价
SYNERGY
23+
6000
全新原装
询价
SMC
21+
TO-247AD
25
全新原装鄙视假货15118075546
询价
TI
22+
QFP
6868
原装现货,可开13%税票
询价
更多S4D10120E供应商 更新时间2024-6-14 15:00:00