650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin Pb − Free Device All SMC parts are traceable to the wafer l

文件：1.52648 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin Pb − Free Device All SMC parts are traceable to the wafer l

文件：1.52648 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VFand QRRat elevated temperatures

文件：223.22 Kbytes 页数：5 Pages

AnalogPower

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：291.41 Kbytes 页数：2 Pages

Cree

科锐

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：773.27 Kbytes 页数：6 Pages

Cree

科锐