磁性接近传感器

Fargo

3.0-3.8GHz 2W InGaP Amplifier

Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated wi

文件：378.6 Kbytes 页数：10 Pages

SIRENZA

2.7-3.8GHz 2W InGaP Amplifier

[Sirenza] Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and

文件：408.61 Kbytes 页数：8 Pages

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RF AMPLIFIER

文件：38.18 Kbytes 页数：1 Pages

SPECTRUM