S25FL512SAGBHBB10集成电路（IC）的存储器规格书PDF中文资料

特性 Features

• CMOS 3.0 V Core with versatile I/O

• SPI with Multi-I/O

• Density

- 512 Mb (64 MB)

• SPI

- SPI Clock polarity and phase modes 0 and 3

- DDR option

- Extended Addressing: 32-bit address

- Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families

- Multi I/O Command set and footprint compatible with the S25FL-P SPI family

• READ Commands

- Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR

- AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address

- Common Flash Interface (CFI) data for configuration information.

• Programming (1.5 MBps)

- 512-byte Page Programming buffer

- Quad-Input Page Programming (QPP) for slow clock systems

- Automatic ECC -internal hardware Error Correction Code generation with single bit error correction

• Erase (0.5 to 0.65 MBps)

- Uniform 256-KB sectors

• Cycling Endurance

- 100,000 Program-Erase Cycles, minimum

• Data Retention

- 20-Year Data Retention, minimum

• Security Features

- OTP array of 1024 bytes

- Block Protection:

• Status Register bits to control protection against program or erase of a contiguous range of sectors.

• Hardware and software control options

- Advanced Sector Protection (ASP)

• Individual sector protection controlled by boot code or password

• Infineon 65 nm MIRRORBIT™ Technology with Eclipse™ Architecture

• Core supply voltage: 2.7 V to 3.6 V

• I/O supply voltage: 1.65 V to 3.6 V

- SO16 and FBGA packages