SI8901

ISOLATEDMONITORINGADC

SI8901

ISOLATEDMONITORINGADC

Features ADC 3inputchannels 10-bitresolution 2.5μsconversiontime IsolatedserialI/Oport UART(Si8900) I2C/SMbus(Si8901) 2MHzSPIport(Si8902) Transientimmunity: 45kV/μs(typ) Temperaturerange: –40to+85°C >60-yearlifeatratedworking voltage 

SI8901EDB

Bi-DirectionalP-Channel20-V(D-S)MOSFET

SI8901EDB

Bi-DirectionalP-Channel20-V(D-S)MOSFET

SI8901EDB

Bi-DirectionalP-Channel20-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •Ultra-LowRSS(on) •ESDProtected:6000V •MICROFOOT®ChipscalePackaging ReducesFootprintArea,Profile(0.65mm) andOn-ResistancePerFootprintArea APPLICATIONS •SmartBatteriesforPortableDevices

TLWR8901

TELUXLED

DESCRIPTION TheTELUXseriesisaclear,nondiffusedLEDfor applicationswheresupremeluminousfluxisrequired. Itisdesignedinanindustrystandard7.62mmsquare packageutilizinghighlydevelopedAllnGaPtechnology. ThesupremeheatdissipationofTELUXallowsapplications athigha

TLWR8901

TELUXLED

TLWR8901

LEDsforAutomotiveandOutdoorApplications

High-performanceVishayTELUXLEDsfeatureafullcolorrangeofdeviceswithawideviewingangleandhighluminousflux. APPLICATIONS • Automotive    –Brakelights    –Taillights    –Turnsignals • Outdoors    –Traffcsignals    –Messagepanels    –Warninglights

TMF8901B

SiRFLDMOSTransistor

□Features -Powergain GP=12.4dBatVDS=4.5V,IDset=200mA,f=470MHz GP=14.7dBatVDS=6.0V,IDset=200mA,f=470MHz -Outputpower POUT=32.4dBmatVDS=4.5V,IDset=200mA,f=470MHz POUT=34.7dBmatVDS=6.0V,IDset=200mA,f=470MHz -Drai

TMF8901F

SiRFLDMOSTransistor

□Features -Powergain GP=12.5dBatVDS=4.5V,IDset=200mA,f=470MHz -Outputpower POUT=32dBmatVDS=4.5V,IDset=200mA,f=470MHz -Drainefficiency ηD=60(typ.) □Applications -VHFandUHFwidebandamplifier