COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION RT2N12M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=4.7 KΩ , R2=47KΩ ) ● Mini package for easy mounting APPLICATION Inverted circuit , switching circuit , interface circuit , driver circuit

文件：54.47 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

复合晶体管

IDC

Drain Current ID= 2A@ TC=25C

文件：65.019 Kbytes 页数：2 Pages

ISC

无锡固电

2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：35.2 Kbytes 页数：5 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.11 Kbytes 页数：2 Pages

ISC

无锡固电