COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION RT2N05M is a compoｓｉｔｅ transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=47 KΩ , R2=47KΩ ) ● Mini package for easy mounting APPLICATION Inverted circuit , switching circuit , interface circuit , driver circuit

文件：58.02 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

复合晶体管

IDC

复合晶体管

IDC

2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs

文件：94.94 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：44.98 Kbytes 页数：5 Pages

Intersil