Crossover processors for industrial products

文件：2.60192 Mbytes 页数：97 Pages

恩XP

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -1.1 V(Max) @IC=-4A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：252.15 Kbytes 页数：2 Pages

ISC

无锡固电

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

Teccor

Electrical Specifications

文件：1.2956 Mbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司