首页 >RN2709,LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
SOMwithMarvellXScalePXA270processorWindowsCE5.0 | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
CrystalUnitSMD3.2x2.520.945MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforcustomerforuseinwirelesscommunications devices,espec | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
DUALHIGH-SPEEDFETDRIVER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
DUALHIGH-SPEEDFETDRIVER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DUALHIGH-SPEEDFETDRIVER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
DUALHIGH-SPEEDFETDRIVER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2709AGRisN-channelMOSFieldEffect TransistordesignedforDC/DCconverterandpower managementapplicationsofnotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=7.0A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=7.0A) •Lo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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