RN2410

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN1410,RN1411

RN2410,LF

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V 0.1A SMINI

Toshiba Semiconductor and Storage

RN2410,LXHF

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q PNP Q1BSR=4.7K, VCEO=

Toshiba Semiconductor and Storage

RSZ-2410

1WattSMDMiniatureIsolatedSingleOutput

RSZ-2410HP

1WattSMDMiniatureIsolatedSingleOutput

SA2410

2.45GHzRFpoweramplifierandT/Rswitch

DESCRIPTION TheSA2410isaGaAsmonolithicpoweramplifierwithanintegratedT/Rswitchdesignedtomeetrequirementsfor802.11(WLAN).TheSA2410usesanon–chip4GHzoscillatortogeneratethenegativebias,thuseliminatingtheneedforanegativesupply.Itoperatesfrom3Vto5.5Vandco

SCH2410

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

SD2410

InfraredSensorsLineGuide

SD2410

InfraredSensorsLineGuide

FEATURES REFLECTIVESENSORS HOA1395. Features:Side-lookingplasticpackage •Phototransistoroutput •Infraredemitterandphototransistordetectorinasinglepackage •Lowprofilefordesignflexibility •Designedforshort-distancedetection •Enhancedsensitivity•Unfocusedforsensi

SDR2410CTM

24AMPS1200VOLTS65nsecULTRAFASTCENTERTAPRECTIFIER