Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

For use in Muting and Switching Applications • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.

文件：122.07 Kbytes 页数：3 Pages

TOSHIBA

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For use in Muting and Switching Applications

文件：269.92 Kbytes 页数：4 Pages

TOSHIBA

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Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：Muting\nPolarity：NPN×2\nInternal Connection：2-in-1 (Common emitter)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC 0.3 A \nCollector Current (Q2) IC 0.3 A \nCollector-emitter voltage (Q1) VCEO 20 V \nCollector-emitter voltage (Q2) VCEO 20 V ;

Toshiba

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For use in Muting and Switching Applications

文件：269.92 Kbytes 页数：4 Pages

TOSHIBA

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