RN1112

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1112

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1112FT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications. •High-densitymountispossiblebecauseofdeviceshousedinverythinTESMpackages. •Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablethemanufactureofever

RN1112_07

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1112ACT

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1112CT

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1112F

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1112FS

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1112(TE85L,F)

Package：SC-75，SOT-416；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A SSM

Toshiba Semiconductor and Storage

RN1112,LXHF(CT

Package：SC-75，SOT-416；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q NPN Q1BSR=22K, VCEO=5

Toshiba Semiconductor and Storage