RMPA2550RF/IF射频/中频RFID的射频放大器规格书PDF中文资料

General Description

The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50Ω minimizes next level PCB space and allows for simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.

特性 Features

• Dual band operation in a single package design

• 26 dB modulated gain 2.4 to 2.5 GHz band

• 27 dB modulated gain 5.15 to 5.85 GHz band

• 26 dBm output power @ 1 dB compression both frequency bands

• 2.0 EVM at 18 dBm modulated Pout, 2.45 GHz

• 2.3 EVM at 18 dBm modulated Pout, 5.45 GHz

• 3.3 V single positive supply operation

• Adjustable bias current operation

• Two power saving shutdown options (bias and logic control)

• Separate integrated power detectors with 20 dB dynamic range

• Low profile 20 pin, 3 x 4 x 0.9 mm standard QFN leadless package

• Internally matched to 50 ohms

• Optimized for use in 802.11a/b/g applications