RMK55N10KD资料datasheet下载批发采购-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
RMK55N10KD	文件：91.01 Kbytes Page：3 Pages	Single Value Chip Resistors	VishayVishay Siliconix 威世科技
55N10	文件：49.16 Kbytes Page：2 Pages	FastSwitchingSpeed	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
CED55N10	文件：868.57 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
CED55N10	文件：645.15 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CEU55N10	文件：645.15 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CEU55N10	文件：1.7768 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedSGTtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司
CEU55N10	文件：868.57 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
FQA55N10	文件：661.6 Kbytes Page：8 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQA55N10	文件：362.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=26mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQAF55N10	文件：658.78 Kbytes Page：8 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB55N10	文件：671.52 Kbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB55N10	文件：1.06236 Mbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB55N10	文件：287.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.026Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQB55N10TM	文件：1.06236 Mbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI55N10	文件：1.06236 Mbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI55N10	文件：671.52 Kbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP55N10	文件：666.32 Kbytes Page：8 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP55N10	文件：332.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=26mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQP55N10	文件：1.68541 Mbytes Page：7 Pages	55A,100VHeatsinkPlanarN-ChannelPowerMOSFET	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司
FQPF55N10	文件：652.22 Kbytes Page：8 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司

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详细参数

型号：
RMK55N10KD
制造商：
VISHAY
制造商全称：
Vishay Siliconix
功能描述：
Single Value Chip Resistors

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	RMK55N2K5B	VISHAY(威世)	23+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市翻身网络技术发展有限公司	RMK-5-751	Mini-circuits	18+	原厂原装	6000	专注Mini射频微波全系列,只做原装正品,现货库存	询价
千层芯半导体(深圳)有限公司	RMK-5-751+	MINI	2018+	SMD	3600	MINI专营品牌全新原装正品假一赔十	询价
深圳市福田区亿兴成电子商行	RMK-5-751+	MINI	TT1224	6688	1816	现货库存	询价
深圳市百视威讯电子科技有限公司	RMK-5-751+		23+	N/A	64910	正品授权货源可靠	询价
深圳市纳立科技有限公司	RMK-5-751+	MINI	三年内		1983	纳立只做原装正品13590203865	询价
深圳市欧特拉科技有限公司	RMK-5-751+	mini	19+		4688	以质为本,只做原装正品	询价
瑞航达科技(深圳)有限公司	RMK-5-751+	Mini-Circuits			638	原装正品	询价
深圳市瑞祥辉半导体有限公司	RMK-5-751+		19+	原厂原包	6850	十年专业专注,优势渠道商正品保证假一罚十	询价
深圳市纳艾斯科技有限公司	RMK-5-751+	MINI	2020+	NULL	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价

更多RMK55N10KD供应商更新时间2024-4-27 23:00:00

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