丝印：60NA；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =60A RDS(ON)

文件：395.58 Kbytes 页数：8 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-Channel IGBT with FRD.

文件：431.7 Kbytes 页数：9 Pages

TSC

台湾半导体

N-Channel IGBT with FRD

General Description The TSG60N100CE using proprietary trench design andadvanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.This device is well suited for the resonant or soft switching applicati

文件：431.7 Kbytes 页数：9 Pages

TSC

台湾半导体