RM2303

Marking：2303；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-30V,ID=-2.0A RDS(ON)

RN2303

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1301~1306

RSZ-2303

1WattSMDMiniatureIsolatedSingleOutput

RSZ-2303HP

1WattSMDMiniatureIsolatedSingleOutput

S2303

SOT-23

S2303

TVSARRAYSERIES

Protects3.3,5,12,15,24,36VComponents UnidirectionalorBidirectional LowLeakage ProvidesElectricallyIsolatedProtection 300W@8/20us Protects1or2Lines SOT-23Packaging “-A”isanAEC-Q101qualifieddevice ThisisaPb-FreeDevice AllSMCpartsaretraceabletothewafe

SC-2303

Avikrimp??FullyInsulatedPiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),18-22AWG,RedInsulator,Loose

SE2303

SOT-23Plastic-EncapsulateMOSFETS

SI2303

P-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •-30V,-2.6A,RDS(ON)=130mΩ@VGS=-10V -30V,-2.0A,RDS(ON)=180mΩ@VGS=-4.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:S3

SI2303

SOT-23Plastic-EncapsulateMOSFETS

FEATURE APPLICATION TrenchFETPowerMOSFET LoadSwitchforPortableDevices DC/DCConverter