Silicon N Channel IGBT High Speed Power Switching

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Silicon N Channel IGBT High Speed Power Switching

• Trench gate and thin wafer technology (G6H series)\n• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ\n• High speed switching tf = 100 ns typ\n• Low leak current ICES = 1 μA max\n• Isolated package TO-220FL;

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Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL

文件：186.2 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

文件：186.2 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

文件：186.2 Kbytes 页数：7 Pages

RENESAS

瑞萨