STS2622

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TSOP6package.

STS2622

DualN-ChannelEnhancementModeMOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

STS2622A

DualN-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

STS2622A

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SufaceMountPackage.

STT2622

N-ChannelEnhancementModePowerMos.FET

TA2622A

SAWFilter751MHzSMD1109(BW=10MHz)

TGA2622

9to10GHz40WGaNPowerAmplifier

TGA2622-CP

9to10GHz35WGaNPowerAmplifier

TGA2622-CP

9–10GHz35WGaNPowerAmplifier

ProductFeatures •FrequencyRange:9–10GHz •PSAT:45.5dBm@PIN=18dBm •PAE:>43%@PIN=18dBm •PowerGain:27.5dB@PIN=18dBm •Bias:VD=28V,IDQ=290mA,VG=-2.7Vtypical, pulsed(PW=100μs,DC=10%) •PackageDimensions:15.2x15.2x3.5mm •Packag

TGA2622-SM

9–10GHz35WattGaNPowerAmplifier

ProductFeatures•FrequencyRange:9–10GHz•PSAT:45.5dBm@PIN=18dBm•PAE:42%@PIN=18dBm•PowerGain:27.5dB@PIN=18dBm•Bias:VD=28V,IDQ=290mA(PulsedVD:PW=100usandDC=10%)•PackageDimensions:7x7x1.75mm Applications•WeatherandMarineRa