3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

文件：252.29 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

文件：127.71 Kbytes 页数：7 Pages

Intersil

ROHM
SOD106

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罗姆

上传：深圳市凯斯宇科技有限公司

RFMD
QFN32

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威讯联合

上传：深圳市旺财半导体有限公司

REMD
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上传：香港创芯邦电子有限公司