首页 >RC28F320C3>规格书列表
型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
RC28F320C3 | 3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:384.02 Kbytes 页数:59 Pages | Intel 英特尔 | Intel | |
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件:1.12721 Mbytes 页数:68 Pages | Intel 英特尔 | Intel |
技术参数
- 存储器格式:
闪存
- 技术:
FLASH - 引导块
- 存储容量:
32Mb (2M x 16)
- 写周期时间 - 字,页:
70ns
- 访问时间:
70ns
- 存储器接口:
并联
- 电压 - 电源:
2.7V ~ 3.6V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装
- 封装/外壳:
64-TBGA
- 供应商器件封装:
64-EasyBGA(10x13)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTEL |
BGA |
73 |
全新原装进口自己库存优势 |
询价 | |||
24+ |
5000 |
公司存货 |
询价 | ||||
INTEL |
25+ |
BGA |
4650 |
询价 | |||
INTEL |
23+ |
BGA64 |
5000 |
原装正品,假一罚十 |
询价 | ||
Intel |
23+ |
64-EasyBGA(10x13) |
73390 |
专业分销产品!原装正品!价格优势! |
询价 | ||
INTEL |
17+ |
TBGA-64 |
6200 |
100%原装正品现货 |
询价 | ||
INTEL |
25+ |
BGA |
18000 |
原厂直接发货进口原装 |
询价 | ||
INTEL |
25+ |
N/A |
453 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INTEL |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
INTEL |
24+ |
NA |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
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