R636-10

PHOTOMULTlPLlER TUBES

UVtoNearIR(R636–10:185to930nm,R758–10:160to930nm)SpectralResponse 28mm(1-1/8Inch)Diameter,GaAs(Cs)Photocathode,9-stage,Side-OnType

R636-10_15

UV to Near IR (R636??0:185 to 930 nm, R758??0:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type

BC636-10

PNPEpitaxialSiliconTransistors

BC636-10

PNPEpitaxialSiliconTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ThroughHolePackage •Capableof830mWattsofPowerDissipation •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensit

BC636-10

PNPmediumpowertransistors

DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Audioandvideoamplifiers.

TPCE636-10R

ReconfigurableFPGAwith16x16bitAnalogInputand16x16bitAnalogOutput

ApplicationInformation TheTPCE636isahalf-lengthX4PCIecompatible moduleprovidingauserconfigurableKintex7FPGA with16ADCinputchannelsand16DACoutput channels. TheTPCE636ADCinputchannelsarebasedonthe LinearDual16-Bit5MspsDifferentialLTC2323-16 ADC.TheTPCE636