首页 >R4164SF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | TFUNKVishay Telefunken 威世威世（VISHAY）集团 | TFUNK | ||
N-Channel30-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HealthandWellness | SILABS Silicon Laboratories | SILABS | ||
EFR32MG12MightyGeckoMulti-ProtocolWirelessSoCFamilyDataSheet | SILABS Silicon Laboratories | SILABS | ||
HighVoltageMonolithicSiliconPowerIC Applications DCbrushlessmotordriverIC Features ●Highvoltagepowersideandlowvoltagesignalsideterminalareseparated. ●Itisthebestforcurrentsensinginthreeshuntresistance. ●Bootstrapcircuitgivessimplehigh-sidesupply. ●Bootstrapdiodesarebuiltin. ●Adeadtime | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HighVoltageMonolithicSiliconPowerIC Applications DCbrushlessmotordriverIC Features ●Highvoltagepowersideandlowvoltagesignalsideterminalareseparated. ●Itisthebestforcurrentsensinginthreeshuntresistance. ●Bootstrapcircuitgivessimplehigh-sidesupply. ●Bootstrapdiodesarebuiltin. ●Adeadtime | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LogicAnalyzerModule | KEYSIGHTKeysight Technologies 是德科技是德科技（中国）有限公司 | KEYSIGHT | ||
65,536x1BITDYNAMICRANDOMACCESSMEMORY DESCRIPTION TheNEC/lPD4164isa65,536wordsby1bitDynamicN-ChannelMOSRAMdesigned tooperatefromasingle+5Vpowersupply.Thenegative-voltagesubstratebiasis internallygenerated-itsoperationisbothautomaticandtransparent. The/lPD4164utilizesadouble-poly-layerN-chann | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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