丝印：R24；Package：SC-59；NPN Silicon RF Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

文件：1.33099 Mbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R24；Package：SOT23-3L；NPN Transistors

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：485.28 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：R24；Package：SOT23；NPN Transistors

Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：1.21418 Mbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：R24；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

文件：591.82 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R24；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

文件：591.82 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R24；Package：SOT-23；HIGH-Frequency Amplifier Transistor

DESCRIPTION The FTC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High

文件：82.32 Kbytes 页数：4 Pages

FS

丝印：R24；Package：SC-70；HIGH-Frequency Amplifier Transistor

DESCRIPTION The FTC3356U is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES ​​​​​​​• We declare that the material of product compliance with RoHS requirements. • Low Noise and High G

文件：85.99 Kbytes 页数：4 Pages

FS

丝印：R24；Package：SC-59；NPN SILICON RF TRANSISTOR

文件：512.19 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R24；Package：SC-59；NPN Silicon RF Transistor

文件：829.39 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R24；Package：SOT-23；GENERAL PURPOSE TRANSISTOR, NPN SILICON RF TRANSISTOR

文件：322.39 Kbytes 页数：6 Pages

AITSEMI

创瑞科技