QPL1163EVB-01中文资料威讯联合数据手册PDF规格书

Key Features

 High Gain: 19dB at 1218 MHz

 5 – 1218 MHz BW

 OIP3: +42 dBm, Downstream 50 – 1218 MHz

 OP1dB: 26 dBm, Downstream 50 – 1218 MHz

 Low Noise Figure: < 2.4 dB, Full Band

 Excellent Composite Distortion

 pHEMT GaAs device technologies

 Compact Size: 8-pin SOIC

 5 to 8V supply voltage operation