| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
POWERFIELDEFFECTTRANSISTOR [ChampionMicroelectronicCorporation] GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalanc | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.7Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤700mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VSiliconN-ChannelPowerMOSFET | ||||
600VSiliconN-ChannelPowerMOSFET | ||||
600VSuperJunctionPowerMOSFET | ||||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LCD&CR | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UIBQ |
2022+ |
TO220F |
5000 |
只做原装公司现货 |
询价 | ||
UBIQ |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
85600 |
正品授权货源可靠 |
询价 | |||
UIBQ |
23+ |
TOTO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
UBIQ |
2020+ |
TO-220F |
39170 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
UIBQ |
20+ |
TO220F |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
UBIQ |
22+ |
TO-220 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
UIBQ |
23+ |
TO220F |
22500 |
公司只做原装正品 |
询价 | ||
UBIQ |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
UBIQ |
2022+ |
TO-220F |
32500 |
原厂代理 终端免费提供样品 |
询价 |
相关规格书
更多- QM10HB-2H
- QM300HA-2H
- QMV104DT5
- QMV155B
- QMV177CT5
- QMV190AT5
- QMV190BT5
- QMV233AT5
- QMV258AT5
- QMV298FT5
- QMV351CY1
- QMV365BT5
- QMV403AT5
- QMV417FH5
- QMV432BT5
- QMV469AT5
- QMV475ET5
- QMV491BT5
- QMV495AT5
- QMV585CT5
- QMV630-1AF5
- QMV636BT5
- QMV650AT5
- QMV71BD1
- QMV71DP5
- QMV755AT5
- QMV81AD1
- QMV900AH5
- QMV913AH5
- QMV97AP5
- QS3125
- QS3125S1
- QS316211PA
- QS32390Q
- QS3244SO
- QS3245SO
- QS3251S1
- QS3253S1
- QS3257Q
- QS3257S1
- QS32X384Q1
- QS32XL384Q1
- QS3383SO
- QS3384QX
- QS3389Q
相关库存
更多- QM262D1
- QM50DY-H
- QMV113AD1
- QMV16BW1
- QMV179AT5
- QMV190BQ1
- QMV221CP5
- QMV234AT5
- QMV262AT5
- QMV300FT5
- QMV362AH5
- QMV391AT5
- QMV416AT5
- QMV418GT5
- QMV453AT5
- QMV474DT5
- QMV480AT5
- QMV493CT5
- QMV554ET5
- QMV628AT5
- QMV635AT5
- QMV647AH5
- QMV650BT5
- QMV71CD1
- QMV74AD1
- QMV818AH5
- QMV863BT5
- QMV902BH5
- QMV964AT5
- QS013
- QS3125Q
- QS3126Q
- QS32384Q
- QS3244Q
- QS3245Q
- QS3251Q
- QS3253Q
- QS3257
- QS3257QX
- QS32X245Q2
- QS32X861Q1
- QS3383Q
- QS3384Q
- QS3384SO
- QS3390Q
