首页 >QLMP-2334>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GENERALPURPOSEAMPLIFIER | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
GENERALPURPOSEAMPLIFIER ProductDescription TheRF2334isageneralpurpose,low-costRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
GENERALPURPOSEAMPLIFIER | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
GENERALPURPOSEAMPLIFIER ProductDescription TheRF2334isageneralpurpose,low-costRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
N-Channel30V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelEnhancementMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
3.5A,30V,RDS(ON)58mN-ChannelEnhancementMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelEnhancementMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
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