600 V, 8 A H-Series PFC Diode

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • Power Factor Correction (PFC) boost diode • Motor drive circuits • DC-AC inverters Features • Low QRR, low IR

文件：228.92 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

超快速硅二极管VRRM     - 600 VIF(AVG)   - 3 A - 12 AQRR       - 5.9 nC - 8.9 nC

Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features\r\n·Now available in TO-263 (D2PAK) package\r\n·Low QRR, Low IRRM, Low tRR\r\n·High dIF/dt capable (1000A/µs)\r\n·Soft recovery\r\n\r\nBenefits\r\n·Increases efficiency\r\n·Eliminates need for snubber circuits\r\n·Reduces EMI filter component size & count\r\n·Enables extremely fast switchin;

PI

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 8A TO263AB

PowerIntegrations

TO-220

POWER

微源半导体

上传：京海半导体(深圳)有限公司

TSMT

ROHM

罗姆

上传：深圳市瑞卓芯科技有限公司