Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Description The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange.

文件：702.58 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz

文件：206.69 Kbytes 页数：10 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz

文件：600.35 Kbytes 页数：10 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Description The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange.

文件：702.58 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Description The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange.

文件：702.58 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Infineon

英飞凌