PUMD6

Marking：D6；Package：SOT363；NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrentperipheraldriver •Replacementofgeneralpurposetransistorsindigital applications •ControlofICinputs. DESCRIPTION NPN/PNP

PUMD6

PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrentperipheraldrivers •Replacementofgeneralpurposetransistorsindigital applications •ControlofICinputs. DESCRIPTION PNP/PN

PUMD6

NPN/PNP resistor-equipped transistor

DESCRIPTION NPN/PNPresistor-equippedtransistorsinanSC-88(SOT363)plasticpackage. FEATURES •Transistorswithdifferentpolarity,eachwithabuilt-in biasresistorR1(typ.4.7kΩ) •Nomutualinterferencebetweenthetransistors •Simplificationofcircuitdesign •Reducesnumber

PUMD6

Low VCEsat (BISS) transistors

PUMD6H

Marking：7G；Package：TSSOP6；50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PUMH7H PNP/PNPcomplement:PUMB3H 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •

PUMD6H-Q

Marking：7G；Package：TSSOP6；50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)inaverysmallSOT363(TSSOP6)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PUMH7H-Q PNP/PNPcomplement:PUMB3H-Q 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistor