NPN/PNP resistor-equipped transistor

DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package. FEATURES • Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number

文件：52.56 Kbytes 页数：8 Pages

PHI

飞利浦

NPN/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION NPN/PNP resistor-equipped transistors (see “_Data_Sheet_Remark Supersedes data of 2003 Nov 04” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripher

文件：298.74 Kbytes 页数：8 Pages

恩XP

丝印：D6；Package：SOT363；NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP

文件：297.97 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PN

文件：136.32 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：7G；Package：TSSOP6；50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7H PNP/PNP complement: PUMB3H 2. Features and benefits • 100 mA output current capability • Built-in resistors •

文件：264.81 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7G；Package：TSSOP6；50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (TSSOP6) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7H-Q PNP/PNP complement: PUMB3H-Q 2. Features and benefits • 100 mA output current capability • Built-in resistor

文件：264.54 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PUMH7H-Q\n PNP/PNP complement: PUMB3H-Q • 100 mA output current capability\n• Built-in resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世