PNP/PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design ■

文件：65.16 Kbytes 页数：9 Pages

恩XP

丝印：B8；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：723.97 Kbytes 页数：15 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世