PTVA120501EA-V1-R2分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PTVA120501EA-V1-R2属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的PTVA120501EA-V1-R2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The PTVA120501EA LDMOS FET is designed for use in power amplifier

applications in the 1200 to 1400 MHz frequency band. Features include

high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides

excellent thermal performance and superior reliability.

Features

• Broadband input matching

• High gain and efficiency

• Typical Pulsed CW performance, 1200 – 1400MHz, 50 V,

300 µs pulse width, 10 duty cycle, class AB

- Output power at P1dB = 54 W

- Efficiency = 55

- Gain = 16 dB

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

• Capable of withstanding a 10:1 load mismatch

(all phase angles) at 50 W peak under RF pulse,

300 μS, 10 duty cycle.