PTFA210451E说明书PDF资料市场行情英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTFA210451E	文件：263.08 Kbytes Page：10 Pages	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ??2025 MHz and 2110 ??2170 MHz 文件：263.08 Kbytes 页数：10 Pages	Infineon 英飞凌	Infineon
PTF210451	文件：406.9 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance 文件：406.9 Kbytes 页数：8 Pages	Infineon 英飞凌	Infineon
PTF210451E	文件：406.9 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance 文件：406.9 Kbytes 页数：8 Pages	Infineon 英飞凌	Infineon
PTF210451E	文件：263.08 Kbytes Page：10 Pages	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ??2025 MHz and 2110 ??2170 MHz 文件：263.08 Kbytes 页数：10 Pages	Infineon 英飞凌	Infineon

型号：
PTFA210451E
制造商：
INFINEON
制造商全称：
Infineon Technologies AG
功能描述：
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz

更多PTFA210451E供应商更新时间2025-10-24 16:04:00