零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PT6601R | 包装:托盘 封装/外壳:14-SIP 模块 类别:电源 - 板安装 直流转换器 描述:DC DC CONVERTER 3.3V | TITexas Instruments 德州仪器美国德州仪器公司 | TI | |
PT6601R | 包装:托盘 封装/外壳:14-SIP 模块 类别:电源 - 板安装 直流转换器 描述:DC DC CONVERTER 3.3V | TITexas Instruments 德州仪器美国德州仪器公司 | TI | |
ComfortProbewithRemovable4mmBananaPlugAdapter | POMONA Pomona Electronics | POMONA | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
1200MHzto3600MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowNoiseJFETAmplifiers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-andP-ChannelV(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
NPChannelMOSFET Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V) | UMWUMW 友台友台半导体 | UMW | ||
30VComplementaryMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
ComplementaryTrenchMOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
ComplementaryTrenchMOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule | ANADIGICS ANADIGICS | ANADIGICS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET |
产品属性
- 产品编号:
PT6601R
- 制造商:
Texas Instruments
- 类别:
电源 - 板安装 > 直流转换器
- 系列:
PT6600
- 包装:
托盘
- 类型:
非隔离 PoL 模块
- 电压 - 输入(最小值):
4.5V
- 电压 - 输入(最大值):
6V
- 电压 - 输出 1:
3.3V
- 电流 - 输出(最大值):
7A
- 应用:
ITE(商业)
- 工作温度:
-40°C ~ 85°C
- 效率:
83%
- 安装类型:
通孔,直角
- 封装/外壳:
14-SIP 模块
- 描述:
DC DC CONVERTER 3.3V
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
POWERTRENDS |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
TI |
23+ |
原厂封装 |
2423 |
原装现货 |
询价 | ||
TI |
22+ |
14-SIP 模块 |
20000 |
绝对原装现货 |
询价 | ||
Texas Instruments |
- |
6000 |
询价 | ||||
POWER TRENDS |
2023+ |
SMD |
16359 |
安罗世纪电子只做原装正品货 |
询价 | ||
TI/德州仪器 |
23+ |
14-SIP 模块 |
8355 |
只做原装现货/实单可谈/支持含税拆样 |
询价 | ||
15+ |
SOP |
1 |
全新原装正品现货 |
询价 | |||
Texas Instruments(德州仪器) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
TI |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
TI |
21+ |
N/A |
50000 |
全新原装正品现货,支持订货 |
询价 |
相关规格书
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