PSMN6R0-30YLD中文资料N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology数据手册Nexperia规格书

描述 Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

特性 Features

• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Low spiking and ringing for low EMI designs
• Optimised for 4.5V gate drive
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175°C
• Wave solderable; exposed leads for optimal visual solder inspection

应用 Application

• On-board DC-to-DC solutions for server and telecommunications
• Voltage regulator modules (VRM)
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control