N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

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PHI

飞利浦

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：250.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：904.24 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

N-channel TrenchMOS transistor

文件：143.9 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

文件：331.86 Kbytes 页数：12 Pages

PHI

飞利浦

PSMN130-200D - N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET - SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on ·Higher operating power due to low thermal resistance\n·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世