N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Features ■ TrenchMOS™ technology ■ Very low on-state resistance ■ Fast Switching ■ Low thermal resistance Applications ■ DC to DC converters ■ Switched mode power supplies

文件：279.88 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Features ■ TrenchMOS™ technology ■ Very low on-state resistance ■ Fast Switching ■ Low thermal resistance Applications ■ DC to DC converters ■ Switched mode power supplies

文件：279.88 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■

文件：238.56 Kbytes 页数：12 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 29A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.45 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 150 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：973.07 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：738.18 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel TrenchMOS transistor

文件：95.92 Kbytes 页数：9 Pages

PHI

飞利浦

PSMN063-150D - N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET - SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on ·Higher operating power due to low thermal resistance\n·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

N-channel enhancement mode field-effect transistor

恩XP