PSMN034-100PS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=34.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

PSMN034-100PS

N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.

1.1Generaldescription StandardlevelN-channelMOSFETinTO220packagequalifiedto175C.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits Highefficiencyduetolowswitching andconductionloss

PSMN034-100PS

N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.; • High efficiency due to low switching and conduction losses\n• Suitable for standard level gate drive\n;

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.\n

PSMN034-100PS

N-Channel 100-V (D-S) MOSFET

PSMN034-100BS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=34.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN034-100BS

N-channel100V34.5mΩstandardlevelMOSFETinD2PAK.

1.1Generaldescription StandardlevelN-channelMOSFETinD2PAKpackagequalifiedto175C.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits Highefficiencyduetolowswitching andconductionlos

PSMN034-100BS

N-channel100V34.5mstandardlevelMOSFETinD2PAK