isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction loss

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安世安世半导体(中国)有限公司

N-Channel 100-V (D-S) MOSFET

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VBSEMI

微碧半导体

N-channel 100 V 34.5 m廓 standard level MOSFET in TO220.

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恩XP

N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and conduction losses\n• Suitable for standard level gate drive;

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