1 0 0 0 - 6 0 0 0 WAT T S 2 U U LT R A C O M PA C T B AT T E R Y C H A R G E R S

文件：249.31 Kbytes 页数：2 Pages

POWERBOX

丝印：PSC0665H；Package：DPAK；650 V, 6 A SiC Schottky diode in DPAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic pa

文件：255.9 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PSC0665K；Package：TO-220-2；650 V, 6 A SiC Schottky diode in TO-220-2 R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. The product

文件：233.91 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

650 V, 6 A SiC Schottky diode in bare die

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent cap

文件：240.38 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

1 0 0 0 - 6 0 0 0 WAT T S 2 U U LT R A C O M PA C T B AT T E R Y C H A R G E R S

文件：249.31 Kbytes 页数：2 Pages

POWERBOX

1 0 0 0 - 6 0 0 0 WAT T S 2 U U LT R A C O M PA C T B AT T E R Y C H A R G E R S

文件：249.31 Kbytes 页数：2 Pages

POWERBOX

Silicon Carbide (SiC) Schottky diodes

Nexperia

安世

650 V, 6 A SiC Schottky diode in DPAK R2P

Nexperia

安世