丝印：PN2907；Package：TO-92；PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

文件：103.01 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：PN2907；Package：TO-923L；PNP General-Purpose Transistor

Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

文件：315.66 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 0.8A TO92-3

ONSEMI

安森美半导体

NPNPNP Dual General Purpose Transistors

Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN), One 2907A Type (PNP) * Ideal for Low Power Amplication and Switching

文件：131.65 Kbytes 页数：5 Pages

WEITRON

PNP switching transistor

DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN complement: PXT2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

文件：44.36 Kbytes 页数：8 Pages

PHI

飞利浦

PNP switching transistor

DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN complement: PXT2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

文件：44.36 Kbytes 页数：8 Pages

PHI

飞利浦