N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：96 Kbytes 页数：10 Pages

PHI

飞利浦

N-channel field-effect transistors

恩XP

恩智浦

N-Channel 20-V (D-S) MOSFET

文件：128.28 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

R-C Thermal Model Parameters

文件：203.78 Kbytes 页数：3 Pages

VAISH

N-Channel Silicon Junction Field-Effect Transistors

Small Outline (Surface Mount) Package Devices

文件：213.13 Kbytes 页数：10 Pages

InterFET