PMBF170规格书供应代理飞利浦Philips-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
PMBF107	文件：70.86 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT23envelopeandintendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitchin	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF170	文件：56.11 Kbytes Page：8 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT23envelope.DesignedforuseasaSurfaceMountedDevice(SMD)inthinandthick-filmcircuitswithapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-s	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF170	文件：379.48 Kbytes Page：14 Pages	N-channel enhancement mode field-effect transistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: PMBF170inSOT23. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applica	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PMBF4391	文件：40.84 Kbytes Page：7 Pages	N-channel FETs DESCRIPTION Symmetricalsiliconn-channeldepletiontypejunctionfield-effecttransistorsonaplasticmicrominiatureenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorsareintendedforlow-powerchopperorswitchingapplicationsinindustry.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF4391	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PMBF4392	文件：40.84 Kbytes Page：7 Pages	N-channel FETs DESCRIPTION Symmetricalsiliconn-channeldepletiontypejunctionfield-effecttransistorsonaplasticmicrominiatureenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorsareintendedforlow-powerchopperorswitchingapplicationsinindustry.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF4392	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PMBF4393	文件：40.84 Kbytes Page：7 Pages	N-channel FETs DESCRIPTION Symmetricalsiliconn-channeldepletiontypejunctionfield-effecttransistorsonaplasticmicrominiatureenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorsareintendedforlow-powerchopperorswitchingapplicationsinindustry.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF4393	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PMBF4416	文件：95.15 Kbytes Page：9 Pages	N-channel field-effect transistor DESCRIPTION N-channelsymmetricalsiliconjunctionFETsinasurface-mountableSOT23envelope.ThesedevicesareintendedforuseinVHF/UHFamplifiers,oscillatorsandmixers. FEATURES •Lownoise •Interchangeabilityofdrainandsourceconnections •Highgain.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF4416A	文件：95.15 Kbytes Page：9 Pages	N-channel field-effect transistor DESCRIPTION N-channelsymmetricalsiliconjunctionFETsinasurface-mountableSOT23envelope.ThesedevicesareintendedforuseinVHF/UHFamplifiers,oscillatorsandmixers. FEATURES •Lownoise •Interchangeabilityofdrainandsourceconnections •Highgain.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF5484	文件：96 Kbytes Page：10 Pages	N-channel field-effect transistors DESCRIPTION N-channel,symmetrical,siliconjunctionFETsinasurface-mountableSOT23envelope.IntendedforuseinVHF/UHFamplifiers,oscillatorsandmixers. FEATURES •Lownoise •Interchangeabilityofdrainandsourceconnections •Highgain.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF5485	文件：96 Kbytes Page：10 Pages	N-channel field-effect transistors DESCRIPTION N-channel,symmetrical,siliconjunctionFETsinasurface-mountableSOT23envelope.IntendedforuseinVHF/UHFamplifiers,oscillatorsandmixers. FEATURES •Lownoise •Interchangeabilityofdrainandsourceconnections •Highgain.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBF5486	文件：96 Kbytes Page：10 Pages	N-channel field-effect transistors DESCRIPTION N-channel,symmetrical,siliconjunctionFETsinasurface-mountableSOT23envelope.IntendedforuseinVHF/UHFamplifiers,oscillatorsandmixers. FEATURES •Lownoise •Interchangeabilityofdrainandsourceconnections •Highgain.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBFJ108	文件：36.29 Kbytes Page：6 Pages	N-channel junction FETs DESCRIPTION SymmetricalN-channeljunctionFETsinaSOT23envelope.Intendedforuseinapplicationssuchasanalogswitches,choppersandcommutatorsandinaudioamplifiers. FEATURES •High-speedswitching •Interchangeabilityofdrainandsourceconnections •LowRDSonatzerogatevoltag	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBFJ108	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PMBFJ109	文件：36.29 Kbytes Page：6 Pages	N-channel junction FETs DESCRIPTION SymmetricalN-channeljunctionFETsinaSOT23envelope.Intendedforuseinapplicationssuchasanalogswitches,choppersandcommutatorsandinaudioamplifiers. FEATURES •High-speedswitching •Interchangeabilityofdrainandsourceconnections •LowRDSonatzerogatevoltag	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBFJ109	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PMBFJ110	文件：36.29 Kbytes Page：6 Pages	N-channel junction FETs DESCRIPTION SymmetricalN-channeljunctionFETsinaSOT23envelope.Intendedforuseinapplicationssuchasanalogswitches,choppersandcommutatorsandinaudioamplifiers. FEATURES •High-speedswitching •Interchangeabilityofdrainandsourceconnections •LowRDSonatzerogatevoltag	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PMBFJ110	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp

12 3 >>>

详细参数

型号：
PMBF
制造商：
NXP Semiconductors
功能描述：
Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R Bulk
功能描述：
MOSFET N SOT-23
功能描述：
MOSFET, N, SOT-23
功能描述：
MOSFET, N, SOT-23; Transistor Polarity

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	PMBF170	NXP/恩智浦	2024+原装现货	SOT23	8950	BOM配单专家,发货快,价格低	询价
深圳市秉祺电子科技有限公司	PMBF170	NXP/恩智浦	22+	SOT-23	98800	欢迎来电咨询只做原装	询价
深圳市航宇科工半导体有限公司	PMBF170	NXP/恩智浦	21+	SOT-23	600000	航宇科工半导体-中国航天科工集团战略合作伙伴!	询价
中天科工半导体（深圳）有限公司	PMBF170	NEXP	24+	SOT-23	45000	热卖优势现货	询价
深圳市龙瀚电子有限公司	PMBF170	NXP	16+/17+	SOT23	3500	原装正品现货供应56	询价
深圳市金华微盛电子有限公司	PMBF170	NXP/恩智浦	2019+	SOT23	36000	原盒原包装可BOM配套	询价
深圳市航润创能电子集团有限公司	PMBF170	NEXPERIA/安世	21+	NA	12000	只做原装,假一罚十	询价
深圳市中利达电子科技有限公司	PMBF170	NXP	22+	SOT-23	15000	原厂/代理渠道价格优势	询价
深圳市金胜达微科技有限公司	PMBF170	nexperi	22+	SOT23	100000	原厂订货价格优势,可开13%的增值税票	询价
贸泽芯城（深圳）电子科技有限公司	PMBF170	NXP(恩智浦)	22+	N/A	12000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多PMBF供应商更新时间2024-6-21 16:36:00

详细参数

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